Part Number | BSM300D12P2E001 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ROHM Semiconductor |
Description | MOSFET 2N-CH 1200V 300A |
Series | - |
Packaging | Tray |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 300A |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 68mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 35000pF @ 10V |
Power - Max | 1875W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Image |
BSM300D12P2E001
ROHMSemiconductor
9154
1.42
SUNTOP SEMICONDUCTOR CO., LIMITED
BSM300D12P2E001
ROHM
5300
2.5275
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
BSM300D12P2E001
Rohm Semiconductor
708
3.635
ONSTAR ELECTRONICS CO., LIMITED
BSM300D12P2E001
ROHM/
5399
4.7425
Viassion Technology Co., Limited
BSM300D12P2E001
ROHM?[Rohm]
3108
5.85
MY Group (Asia) Limited