Part Number | BUB323ZT4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ROHM Semiconductor |
Description | TRANS NPN DARL 350V 10A D2PAK |
Series | - |
Packaging | |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 5A, 4.6V |
Power - Max | 150W |
Frequency - Transition | 2MHz |
Operating Temperature | -65°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Image |
BUB323ZT4G
ROHMSemiconductor
35200
1.35
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BUB323ZT4G
ROHM
19800
2.145
CIS Ltd (CHECK IC SOLUTION LIMITED)
BUB323ZT4G
Rohm Semiconductor
10050
2.94
FLOWER GROUP(HK)CO.,LTD
BUB323ZT4G
ROHM/
1500
3.735
Nosin (HK) Electronics Co.
BUB323ZT4G
ROHM?[Rohm]
8500
4.53
SUMMER TECH(HK) LIMITED