ROHM Semiconductor

Ref. [hkinrohmsemiconductor20220920][hkinbrandcloudAMpd]

ROHM was established in Kyoto in 1958 as initially a manufacturer of small electronic components. In 1967 production was expanded to include transistors and diodes, and in 1969 ICs and other semiconductor products were added to the lineup. Two years later (in 1971), going against conventional Japanese business culture, the company entered the US market by establishing a sales office and IC design center in Silicon Valley. Through the hard work and passionate dedication of its young work force, business flourished, causing the industry to take notice. ROHM's expansion overseas soon became a template for other companies and eventually was accepted as common business practice.

Rated (5/5) based on 10 customer reviews

Description

PRODUCTION DATA. CSD19502Q5B . SLPS413B DECEMBER 2013 REVISED MAY 2017. CSD19502Q5B 80 V N-Channel NexFET Power MOSFET. 1. Apr 2, 2015 8. UCC2808D-2. U1. 1 F. C4. GND. GND. 200KHz. 330pF. C3. 10.7k. R6. 1.00k. R3. /ENABLE. GND. 4. 7,8. 1,2,3. 5,6,. Q1. CSD19502Q5B . 3.3. Here MOSFET CSD19502Q5B (80V/100A, DNK0008A) and diode V10P-M3/86A (100V/10A, TO-227) are chosen. 4.3. LM3481 Flyback CCM Flyback Transfer LTV-817S. VOUT. BAT+. 330 F. C3. 10 F. C4. 25.5k. R5. 60.4k. R2. 4. 7,8. 1,2. ,3 . 5,6. ,. Q1. CSD19502Q5B . 100. R6. 2200pF. C12. 1. 3. 2. D1. V10P10-M3/86A. CSD19502Q5B . 80. 20. 2.7. 157. 3.4. 48. 8.6. 14. Single. SON5x6. 55 to 150. CSD19503KCS. 80. 20. 2.8. 94. 7.6. 28. 5.4. 9.8. Single. TO-220. 55 to 175.

Part Number CSD19502Q5B
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand ROHM Semiconductor
Description MOSFET N-CH 80V 100A 8SON
Series NexFET
Packaging Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 19A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON (5x6)
Package / Case 8-PowerTDFN
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.68   Highest Price: $4.23
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Part Number:

CSD19502Q5B

Brand:

ROHMSemiconductor

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5000

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0.68

Company:

Gallop Great Holdings (Hong Kong) Limited

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CSD19502Q5B

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ROHM

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15000

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1.5675

Company:

SUNTOP SEMICONDUCTOR CO., LIMITED

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CSD19502Q5B

Brand:

Rohm Semiconductor

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12000

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2.455

Company:

Zhaoxin Electronic Limited

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CSD19502Q5B

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ROHM/

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1000

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3.3425

Company:

HK FEILIDI ELECTRONIC CO., LIMITED

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CSD19502Q5B

Brand:

ROHM?[Rohm]

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19800

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Company:

ShenZhen HengBin Technology Co.,Limited

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