Part Number | DTC123JET1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ROHM Semiconductor |
Description | TRANS PREBIAS NPN 200MW SC75 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SC-75 |
Image |
DTC123JET1G
ROHMSemiconductor
1300
0.45
HK HEQING ELECTRONICS LIMITED
DTC123JET1G
ROHM
35800
1.4125
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
DTC123JET1G
Rohm Semiconductor
3000
2.375
FINECHIPS ELECTRONICS (HK) CO.,LIMITED
DTC123JET1G
ROHM/
4
3.3375
HONG KONG HORNG SHING LIMITED
DTC123JET1G
ROHM?[Rohm]
9000
4.3
Yingxinyuan INT'L (Group) Limited