Part Number | ES6U2T2R |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 20V 1.5A WEMT6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
Vgs (Max) | ±10V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WEMT |
Package / Case | SOT-563, SOT-666 |
Image |
ES6U2T2R
ROHMSemiconductor
16000
1.26
Finestock Electronics HK Limited
ES6U2T2R
ROHM
12000
2.6625
Shenzhen Kaidike Electronics Co., Ltd
ES6U2T2R
Rohm Semiconductor
8000
4.065
HK ZHIRUI ELECTRONICS LIMITED
ES6U2T2R
ROHM/
12891
5.4675
CIS Ltd (CHECK IC SOLUTION LIMITED)
ES6U2T2R
ROHM?[Rohm]
8000
6.87
SOUTHCHIP LIMITED