Part Number | FDD3N50NZTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 500V DPAK |
Series | UniFET-II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FDD3N50NZTM
ROHMSemiconductor
16000
0.57
Finestock Electronics HK Limited
FDD3N50NZTM
ROHM
10000
1.6875
HK HEQING ELECTRONICS LIMITED
FDD3N50NZTM
Rohm Semiconductor
10000
2.805
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDD3N50NZTM
ROHM/
18000
3.9225
MY Group (Asia) Limited
FDD3N50NZTM
ROHM?[Rohm]
6000
5.04
Riking Technology (HK) Co., Limited