Description
MOSFET 2N-CH 30V 7A/11A HSML Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 7A, 11A Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) @ Vds: 500pF @ 15V Power - Max: 2W Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10
Part Number | HS8K11TB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ROHM Semiconductor |
Description | MOSFET 2N-CH 30V 7A/11A HSML |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7A, 11A |
Rds On (Max) @ Id, Vgs | 17.9 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V |
Power - Max | 2W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-UDFN Exposed Pad |
Supplier Device Package | HSML3030L10 |
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