Part Number | IMB4AT110 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ROHM Semiconductor |
Description | TRANS PREBIAS DUAL PNP SMT6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SMT6 |
Image |
IMB4AT110
ROHMSemiconductor
13522
0.48
ONSTAR ELECTRONICS CO., LIMITED
IMB4AT110
ROHM
4900
1.4225
Yingxinyuan INT'L (Group) Limited
IMB4A T110
Rohm Semiconductor
14200
2.365
N&S Electronic Co., Limited
IMB4AT110
ROHM/
368000
3.3075
Shenzhen WTX Capacitor Co., Ltd.
IMB4AT110
ROHM?[Rohm]
24000
4.25
N&S Electronic Co., Limited