Description
Nov 28, 2013 This device is an N-channel Power MOSFET developed using the second generation of. MDmesh technology. This revolutionary Power. Thermal Resistance, Junction to Case. R JC. 83.3. C/W. Stresses exceeding Maximum Ratings may damage the device. Maximum. Ratings are stress ratings
Part Number | MDF11N60 |
Brand | ROHM Semiconductor |
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MDF11N60
ROHMSemiconductor
10000
1.04
Ysx Tech Co., Limited
MDF11N60
ROHM
100
1.77
RX ELECTRONICS LIMITED
MDF11N60
Rohm Semiconductor
5000
2.5
Yingxinyuan INT'L (Group) Limited
MDF11N60
ROHM/
22246
3.23
N&S Electronic Co., Limited
MDF11N60
ROHM?[Rohm]
4
3.96
Cicotex Electronics (HK) Limited