Part Number | R6009KNX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 600V 9A TO220-3 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 535 mOhm @ 2.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image |
R6009KNX
ROHMSemiconductor
220360
1.53
Cinty Int'l (HK) Industry Co., Limited
R6009KNX
ROHM
180
2.065
SUNTOP SEMICONDUCTOR CO., LIMITED
R6009KNX
Rohm Semiconductor
21878
2.6
N&S Electronic Co., Limited
R6009KNX**
ROHM/
49800
3.135
CIS Ltd (CHECK IC SOLUTION LIMITED)
R6009KNX
ROHM?[Rohm]
100
3.67
Yingxinyuan INT'L (Group) Limited