Part Number | R6030ENZ1C9 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 600V 30A TO247 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 14.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
R6030ENZ1C9
ROHMSemiconductor
9898
0.1
ONSTAR ELECTRONICS CO., LIMITED
R6030ENZ1C9
ROHM
9721
0.3775
CHIPMALL ELECTRONICS LIMITED
R6030ENZ1C9
Rohm Semiconductor
7092
0.655
Bonase Electronics (HK) Co., Limited
R6030ENZ1C9
ROHM/
6512
0.9325
MY Group (Asia) Limited
R6030ENZ1C9
ROHM?[Rohm]
8278
1.21
MX-CHIPS ELECTRONICS LIMITED