Part Number | R8002ANX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 800V 2A TO-220FM |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 12.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 4.3 Ohm @ 1A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FM |
Package / Case | TO-220-3 Full Pack |
Image |
R8002ANX
ROHMSemiconductor
759
0.89
Gallop Great Holdings (Hong Kong) Limited
R8002ANX
ROHM
100000
1.4775
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
R8002ANX**
Rohm Semiconductor
49800
2.065
CIS Ltd (CHECK IC SOLUTION LIMITED)
R8002ANX
ROHM/
15720
2.6525
ONSTAR ELECTRONICS CO., LIMITED
R8002ANX
ROHM?[Rohm]
200000
3.24
Shenzhen WTX Capacitor Co., Ltd.