Part Number | RDN100N20FU6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 200V 10A TO-220FN |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 543pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FN |
Package / Case | TO-220-3 Full Pack |
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RDN100N20FU6
ROHMSemiconductor
579
1.32
HK HEQING ELECTRONICS LIMITED
RDN100N20FU6
ROHM
12924
2.4275
Heisener Electronics Limited
RDN100N20FU6
Rohm Semiconductor
1629
3.535
CIS Ltd (CHECK IC SOLUTION LIMITED)
RDN100N20FU6
ROHM/
950
4.6425
Yingxinyuan INT'L (Group) Limited
RDN100N20FU6
ROHM?[Rohm]
267863
5.75
Cicotex Electronics (HK) Limited