Part Number | RF4E070BNTR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 7A 8-HUML |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 28.6 mOhm @ 7A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-HUML2020L8 (2x2) |
Package / Case | 8-PowerUDFN |
Image |
RF4E070BNTR
ROHMSemiconductor
2043
0.45
Dan-Mar Components Inc.
RF4E070BNTR
ROHM
1000
1.7975
ONSTAR ELECTRONICS CO., LIMITED
RF4E070BNTR
Rohm Semiconductor
18000
3.145
MY Group (Asia) Limited
RF4E070BNTR
ROHM/
18000
4.4925
MASSTOCK ELECTRONICS LIMITED
RF4E070BN
ROHM?[Rohm]
19060
5.84
Yingxinyuan INT'L (Group) Limited