Part Number | RF4E080BNTR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 8A 8-HUML |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 17.6 mOhm @ 8A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-HUML2020L8 (2x2) |
Package / Case | 8-PowerUDFN |
Image |
RF4E080BNTR
ROHMSemiconductor
12000
0.8
HK HEQING ELECTRONICS LIMITED
RF4E080BNTR
ROHM
180
1.87
SUNTOP SEMICONDUCTOR CO., LIMITED
RF4E080BNTR
Rohm Semiconductor
9000
2.94
Kang Da Electronics Co.
RF4E080BNTR
ROHM/
165
4.01
Yingxinyuan INT'L (Group) Limited
RF4E080BNTR
ROHM?[Rohm]
32993
5.08
N&S Electronic Co., Limited