Part Number | RGT8NS65DGTL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ROHM Semiconductor |
Description | IGBT 650V 8A 65W TO-263S |
Series | - |
Packaging | Cut Tape (CT) |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 8A |
Current - Collector Pulsed (Icm) | 12A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
Power - Max | 65W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 13.5nC |
Td (on/off) @ 25°C | 17ns/69ns |
Test Condition | 400V, 4A, 50 Ohm, 15V |
Reverse Recovery Time (trr) | 40ns |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | LPDS (TO-263S) |
Image |
RGT8NS65DGTL
ROHMSemiconductor
922
0.63
Southern Electronics Tech Limited
RGT8NS65DGTL
ROHM
8000
1.6525
MY Group (Asia) Limited
RGT8NS65DGTL
Rohm Semiconductor
15721
2.675
ONSTAR ELECTRONICS CO., LIMITED
RGT8NS65DGTL
ROHM/
6020
3.6975
Viassion Technology Co., Limited
RGT8NS65DGTL
ROHM?[Rohm]
990
4.72
FASEEN TECH LIMITED