Part Number | RP1E090XNTCR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 9A MPT6 |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MPT6 |
Package / Case | 6-SMD, Flat Leads |
Image |
RP1E090XNTCR
ROHMSemiconductor
1000
0.67
MY Group (Asia) Limited
RP1E090XNTCR
ROHM
4260
1.6625
ONSTAR ELECTRONICS CO., LIMITED
RP1E090RPFX3TR
Rohm Semiconductor
100000
2.655
Bonase Electronics (HK) Co., Limited
RP1E090RPTR
ROHM/
18000
3.6475
MY Group (Asia) Limited
RP1E090XNFPFTCR
ROHM?[Rohm]
1055
4.64
HK TWO L ELECTRONIC LIMITED