Part Number | RQ3E080GNTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 8A 8-HSMT |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
Rds On (Max) @ Id, Vgs | 16.7 mOhm @ 8A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
Image |
RQ3E080GNTB
ROHMSemiconductor
25856
1.8
HK HEQING ELECTRONICS LIMITED
RQ3E080GNTB
ROHM
180
2.9875
SUNTOP SEMICONDUCTOR CO., LIMITED
RQ3E080GNTB
Rohm Semiconductor
23256
4.175
Gallop Great Holdings (Hong Kong) Limited
RQ3E080GNTB
ROHM/
16665
5.3625
Yingxinyuan INT'L (Group) Limited
RQ3E080GNTB
ROHM?[Rohm]
15171
6.55
ONSTAR ELECTRONICS CO., LIMITED