Part Number | RQ3E100GNTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 10A 8-HSMT |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
Rds On (Max) @ Id, Vgs | 11.7 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
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RQ3E100GNTB
ROHMSemiconductor
23256
0.95
Gallop Great Holdings (Hong Kong) Limited
RQ3E100GNTB
ROHM
100000
1.9
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
RQ3E100GNTB
Rohm Semiconductor
180
2.85
SUNTOP SEMICONDUCTOR CO., LIMITED
RQ3E100GNTB
ROHM/
18000
3.8
MY Group (Asia) Limited
RQ3E100GNTB
ROHM?[Rohm]
200
4.75
Kinda Components Limited