Part Number | RQ3E160ADTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 16A 8HSMT |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 16A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
Image |
RQ3E160ADTB
ROHMSemiconductor
62514
0.67
SUNTOP SEMICONDUCTOR CO., LIMITED
RQ3E160ADTB
ROHM
5997
1.655
Sunrich Semiconductor (Hong Kong) Limited
RQ3E160ADTB
Rohm Semiconductor
3000
2.64
HK HEQING ELECTRONICS LIMITED
RQ3E160ADTB
ROHM/
4260
3.625
ONSTAR ELECTRONICS CO., LIMITED
RQ3E160ADM6
ROHM?[Rohm]
31000
4.61
CIS Ltd (CHECK IC SOLUTION LIMITED)