Part Number | RS1E350BNTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 35A 8HSOP |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 35A |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 35W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 35A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSOP |
Package / Case | 8-PowerTDFN |
Image |
RS1E350BNTB
ROHMSemiconductor
8184
0.21
HK HEQING ELECTRONICS LIMITED
RS1E350BNTB
ROHM
7128
0.685
CIS Ltd (CHECK IC SOLUTION LIMITED)
RS1E350BNTB
Rohm Semiconductor
8373
1.16
Redstar Electronic Limited
RS1E350BNTB
ROHM/
2360
1.635
Gallop Great Holdings (Hong Kong) Limited
RS1E350BNTB
ROHM?[Rohm]
1860
2.11
Cicotex Electronics (HK) Limited