Part Number | SCT2160KEC |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 1200V 22A TO-247 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Vgs(th) (Max) @ Id | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 800V |
Vgs (Max) | +22V, -6V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Rds On (Max) @ Id, Vgs | 208 mOhm @ 7A, 18V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
SCT2160KEC
ROHMSemiconductor
1098
0.42
Gallop Great Holdings (Hong Kong) Limited
SCT2160KEC
ROHM
3167
1.32
Yingxinyuan INT'L (Group) Limited
SCT2160KEC
Rohm Semiconductor
6795
2.22
Cicotex Electronics (HK) Limited
SCT2160KEC
ROHM/
7867
3.12
CIS Ltd (CHECK IC SOLUTION LIMITED)
SCT2160KEC
ROHM?[Rohm]
2822
4.02
N&S Electronic Co., Limited