Part Number | SCT2H12NZGC11 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 1700V 3.7A |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
Vgs (Max) | +22V, -6V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PFM |
Package / Case | TO-3PFM, SC-93-3 |
Image |
SCT2H12NZGC11
ROHMSemiconductor
9533
1.76
HK HEQING ELECTRONICS LIMITED
SCT2H12NZGC11
ROHM
6019
2.465
SUNTOP SEMICONDUCTOR CO., LIMITED
SCT2H12NZGC11
Rohm Semiconductor
2880
3.17
Gallop Great Holdings (Hong Kong) Limited
SCT2H12NZGC11
ROHM/
5689
3.875
CIS Ltd (CHECK IC SOLUTION LIMITED)
SCT2H12NZGC11
ROHM?[Rohm]
1621
4.58
SEHOT CO., LIMITED