Part Number | SCT3060ALGC11 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET NCH 650V 39A TO247N |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 852pF @ 500V |
Vgs (Max) | +22V, -4V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 13A, 18V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
Image |
Hot Offer
SCT3060ALGC11
ROHM?[Rohm]
10
5.5
ANCHIP TECHNOLOGY CO., LIMITED
SCT3060ALGC11
ROHMSemiconductor
16000
0.25
Finestock Electronics HK Limited
SCT3060ALGC11
ROHM
220360
1.5625
Cinty Int'l (HK) Industry Co., Limited
SCT3060ALGC11
Rohm Semiconductor
186
2.875
Pacific Corporation
SCT3060ALGC11
ROHM/
11180
4.1875
N&S Electronic Co., Limited