Part Number | SCT3120ALGC11 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET NCH 650V 21A TO247N |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
Vgs (Max) | +22V, -4V |
FET Feature | - |
Power Dissipation (Max) | 103W (Tc) |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
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SCT3120ALGC11
ROHMSemiconductor
180
0.26
SUNTOP SEMICONDUCTOR CO., LIMITED
SCT3120ALGC11
ROHM
3000
0.9075
Mecri (HK) Technology Co,.Limited
SCT3120ALGC11**
Rohm Semiconductor
49800
1.555
CIS Ltd (CHECK IC SOLUTION LIMITED)
SCT3120ALGC11
ROHM/
420
2.2025
Huashu Technologies PTE Limited
SCT3120ALGC11
ROHM?[Rohm]
900
2.85
Corich International Ltd.