Part Number | SI4686DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 30V 18.2A 8-SOIC |
Series | TrenchFET, WFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 5.2W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 13.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4686DY-T1-GE3
ROHMSemiconductor
9728
0.17
HK HEQING ELECTRONICS LIMITED
SI4686DY-T1-GE3
ROHM
7480
1.1675
Gallop Great Holdings (Hong Kong) Limited
SI4686DY-T1-GE3
Rohm Semiconductor
225800
2.165
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4686DY-T1-GE3
ROHM/
4868000
3.1625
Shenzhen WTX Capacitor Co., Ltd.
SI4686DY-T1-GE3
ROHM?[Rohm]
229
4.16
HONG KONG HORNG SHING LIMITED