Part Number | SI4936CDY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ROHM Semiconductor |
Description | MOSFET 2N-CH 30V 5.8A 8SO |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.8A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 15V |
Power - Max | 2.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4936CDY-T1-E3
ROHMSemiconductor
3216
0.11
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4936CDY-T1-E3
ROHM
9345
0.9275
Hong Kong Yingweida Electronics Co., Ltd.
SI4936CDY-T1-E3
Rohm Semiconductor
173
1.745
Shenzhen WTX Capacitor Co., Ltd.
Si4936CDY-T1-E3
ROHM/
1897
2.5625
Yingxinyuan INT'L (Group) Limited
Si4936CDY-T1-E3
ROHM?[Rohm]
9128
3.38
TERNARY UNION CO., LIMITED