ROHM Semiconductor

Description

Nov 27, 2009 SPP11N60C3 . SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185. Cool MOS Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.38. . ID. 11. A. Feature. New revolutionary high voltage technology. Ultra low gate charge. Periodic avalanche rated. Extreme dv/dt rated. High peak current capability. Improved transconductance. PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute). PG-TO262. PG-TO220FP. PG-TO220. P-TO220-3-31. 1. 2. Dec 14, 2007 C. 160. TC. 0. 10. 20. 30. 40. 50. 60. 70. 80. 90. 100. 110. 120. W. 140. SPP11N60C3 . P tot. 2 Power dissipation FullPAK. Ptot = f (TC). 0. 20. 40. 60. 80. 100. 120. C 160. TC. 0. 5. 10. 15. 20. 25. W. 35. P tot. 3 Safe operating area. ID = f ( VDS ) parameter : D = 0 , TC=25 C. 10. 0. 10. 1. 10. 2. 10. 3. V. VDS. -2. 10. -1. 10. 0. 10. 1. 10. 2. 10. A. I D tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms. DC. 4 Safe operating area FullPAK. ID = f (VDS) parameter: D = 0, TC = 25 C. SPD11N60C3 IPD60R380C6 SPB11N60C3 IPB60R380C6 SPP11N60C3 IPP60R380E6 SPA11N60C3 IPA60R380E6 SPI11N60C3. IPI60R380C6. 0.28 . SPB15N60C3 IPB60R280C6 SPP15N60C3 IPP60R280E6 SPA15N60C3 IPA60R280E6 SPI15N60C3. IPI60R280C6 SPW15N60C3 IPW60R280E6. 0.19 . SPB20N60C3 IPB60R190C6 SPP20N60C3 IPP60R190E6 SPA20N60C3 IPA60R190E6 SPI20N60C3. IPI60R190C6 SPW20N60C3 IPW60R190E6. 0.16 . SPB24N60C3 Mar 29, 2017 Sensing NTC Thermistor. 330 k . 5%. Disc - Radial. Vishay. NTCLE100E3334JB0. Yes. Yes. OK1. 1. Optocoupler. PC817. -. 4-DIP. Sharp. PC817X2J000F. Yes. Yes. Q1. 1. N MOSFET Transistor. SPP11N60C3 . -. TO220. Infineon. SPP11N60C3 . Yes. Yes. R1. 1. Resistor Through Hole, High Voltage. 4.7 M . 5%. Axial Lead. Welwyn. VRW37-4M7JI. Yes. Yes. R100, R101. 2. Resistor SMD. 2.7 k . 1%. 1206. Rohm. MCR18EZHF2701. Yes. Yes. R102. 1. Resistor SMD. diode. Both Eon and Eoff strongly depend on the value of drain current Figure 5. Eon losses are dominated by the used commutated diode, not by MOSFET. We should take the power losses value at the corresponding drain current value in particular case. The curve can be interpolated with a second order polynome in order to simplify the calculations. Figure 5. Switching Energy Losses vs. Drain Current. ( SPP11N60C3 , SDP06S60, Rgate = 6.8 , Vds = 380 V, TJ = 125 C) f. E . E. P off.