Part Number | STW19NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ROHM Semiconductor |
Description | MOSFET N-CH 600V 13A TO-247 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 285 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
STW19NM60N
ROHMSemiconductor
957
0.07
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STW19NM60N
ROHM
2045
0.96
Gallop Great Holdings (Hong Kong) Limited
STW19NM60N
Rohm Semiconductor
4901
1.85
HK XINYI COMPONENTS ASIA CO., LIMITED
STW19NM60N
ROHM/
9527
2.74
Sunton Electronics Co., Limited
STW19NM60N
ROHM?[Rohm]
9907
3.63
Corich International Ltd.