Description
MOSFET 2P-CH 20V 1A TUMT6 Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 1A Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) @ Vds: 150pF @ 10V Power - Max: 1W Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6
Part Number | US6J2TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ROHM Semiconductor |
Description | MOSFET 2P-CH 20V 1A TUMT6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1A |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
Power - Max | 1W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Supplier Device Package | TUMT6 |
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