Description
MOSFET 2N-CH 20V 0.1A VMT6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 100mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 7.1pF @ 10V Power - Max: 120mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6
Part Number | VT6K1T2CR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | ROHM Semiconductor |
Description | MOSFET 2N-CH 20V 0.1A VMT6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
Power - Max | 120mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Supplier Device Package | VMT6 |
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